{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10472731","patent":{"patent_number":"US-10472731","title":"Semiconductor structure and method of forming the same","assignee":null,"inventors":[],"filing_date":"2017-04-25T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method of forming a semiconductor structure is disclosed. A substrate is provided with a pad metal and a fuse metal formed thereon. A liner and an etching stop layer are formed at least covering a top surface of the fuse metal. A dielectric layer is formed on the substrate and a passivation layer is formed over the dielectric layer. A pad opening and a fuse opening are defined in the passivation layer. A first etching step is performed to remove the dielectric layer from the pad opening and the fuse opening to expose a top surface of the pad metal from the pad opening and an upper surface of the etching stop layer from the fuse opening respectively. A second etching step is performed to remove the etching stop layer from the fuse opening until an upper surface of the liner is exposed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and method of forming the same","description":"A method of forming a semiconductor structure is disclosed. A substrate is provided with a pad metal and a fuse metal formed thereon. A liner and an etching stop layer are formed at least covering a t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10472731","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10472731","citation_suggestion":"Patentable. \"Semiconductor structure and method of forming the same\" (US-10472731). https://patentable.app/patents/US-10472731","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10472731","json":"https://patentable.app/api/llm-context/US-10472731","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:37:00.603Z"}