{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475500","patent":{"patent_number":"US-10475500","title":"Memory cell imprint avoidance","assignee":null,"inventors":[],"filing_date":"2018-08-23T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["G11C","G06F","G06F","G11C","G11C","G11C","G11C","G11C"],"num_claims":23,"abstract":"Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A cell may be written with a value that is intended to convey a different logic state than may typically be associated with the value. For example, a cell that has stored a charge associated with one logic state for a time period may be re-written to store a different charge, and the re-written cell may still be read to have the originally stored logic state. An indicator may be stored in a latch to indicate whether the logic state currently stored by the cell is the intended logic state of the cell. A cell may, for example, be re-written with an opposite value periodically, based on the occurrence of an event, or based on a determination that the cell has stored one value (or charge) for a certain time period."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory cell imprint avoidance","description":"Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A cell may be written with a value that is intended to convey a different logic state than may typically","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475500","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475500","citation_suggestion":"Patentable. \"Memory cell imprint avoidance\" (US-10475500). https://patentable.app/patents/US-10475500","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475500","json":"https://patentable.app/api/llm-context/US-10475500","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:58:43.132Z"}