{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475580","patent":{"patent_number":"US-10475580","title":"Oxide dielectric and method for manufacturing same, and solid state electronic device and method for manufacturing same","assignee":null,"inventors":[],"filing_date":"2015-07-10T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric.An oxide layer 30 includes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a β-BiNbO4-type crystal structure. The oxide layer 30 has a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layer 30 in a temperature range of 25° C. or more and 120° C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layer 30 in the temperature range."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Oxide dielectric and method for manufacturing same, and solid state electronic device and method for manufacturing same","description":"There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475580","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475580","citation_suggestion":"Patentable. \"Oxide dielectric and method for manufacturing same, and solid state electronic device and method for manufacturing same\" (US-10475580). https://patentable.app/patents/US-10475580","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475580","json":"https://patentable.app/api/llm-context/US-10475580","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:52:26.334Z"}