{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475648","patent":{"patent_number":"US-10475648","title":"Method for patterning a semiconductor structure","assignee":null,"inventors":[],"filing_date":"2018-05-01T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for patterning a semiconductor structure is provided, including forming an additional third material layer on a thinner portion of a second material layer to be an etching buffer layer. The removed thickness of the thinner portion of the second material layer covered by the third material layer during an etching back process is therefore reduced."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for patterning a semiconductor structure","description":"A method for patterning a semiconductor structure is provided, including forming an additional third material layer on a thinner portion of a second material layer to be an etching buffer layer. The r","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475648","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475648","citation_suggestion":"Patentable. \"Method for patterning a semiconductor structure\" (US-10475648). https://patentable.app/patents/US-10475648","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475648","json":"https://patentable.app/api/llm-context/US-10475648","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:52:02.220Z"}