{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475693","patent":{"patent_number":"US-10475693","title":"Method for forming single diffusion breaks between finFET devices and the resulting devices","assignee":null,"inventors":[],"filing_date":"2018-06-07T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method includes forming a first hard mask layer above a substrate. The first hard mask layer is patterned to define a plurality of fin openings and at least a first diffusion break opening. A first etch process is performed to define a plurality of fins in the substrate and a first diffusion break recess in a selected fin. A first dielectric layer is formed between the fins and in the first diffusion break recess to define a first diffusion break. A second hard mask layer having a second opening positioned above the first diffusion break is formed above the first hard mask layer and the first dielectric layer. A second dielectric layer is formed in the second opening. The second hard mask layer is removed. A second etch process is performed to recess the first dielectric layer to expose upper portions of the plurality of fins."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming single diffusion breaks between finFET devices and the resulting devices","description":"A method includes forming a first hard mask layer above a substrate. The first hard mask layer is patterned to define a plurality of fin openings and at least a first diffusion break opening. A first ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475693","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475693","citation_suggestion":"Patentable. \"Method for forming single diffusion breaks between finFET devices and the resulting devices\" (US-10475693). https://patentable.app/patents/US-10475693","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475693","json":"https://patentable.app/api/llm-context/US-10475693","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:15:36.586Z"}