{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475878","patent":{"patent_number":"US-10475878","title":"BEOL capacitor through airgap metallization","assignee":null,"inventors":[],"filing_date":"2017-12-28T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"A backend-of-the-line (BEOL) semiconductor capacitor made by method, apparatus, or computer program product, through an airgap metallization process, patterning a first electrode by removing a portion of inter-layer dielectric for a desired capacitor area, depositing a dielectric for a capacitor insulator, filling the desired capacitor area to form a second electrode, polishing and capping the second electrode, and interconnecting the first electrode and the second electrode. The manufactured product has a bottom electrode, composed of a conductor, electrically connected to upward conductive prominences; a low-K layer, above and conjoined to the bottom layer and surrounding the prominences, composed of a low-K dielectric; an isolation layer, above the low-K layer and surrounding the prominences, composed of a high-K insulator material, where modulating its material and thickness controls the capacitance; and a top electrode, composed of a conductor and electrically connected to downward prominences, where the bottom and top electrodes are interconnected."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"BEOL capacitor through airgap metallization","description":"A backend-of-the-line (BEOL) semiconductor capacitor made by method, apparatus, or computer program product, through an airgap metallization process, patterning a first electrode by removing a portion","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475878","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475878","citation_suggestion":"Patentable. \"BEOL capacitor through airgap metallization\" (US-10475878). https://patentable.app/patents/US-10475878","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475878","json":"https://patentable.app/api/llm-context/US-10475878","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:45:38.055Z"}