{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475879","patent":{"patent_number":"US-10475879","title":"Support pillar structures for leakage reduction in a three-dimensional memory device and methods of making the same","assignee":null,"inventors":[],"filing_date":"2018-06-28T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":20,"abstract":"Multiple tier structures including a respective alternating stack of insulating layers and electrically conductive layers is formed over a substrate. A memory opening fill structure extends through the alternating stacks, and includes a vertical semiconductor channel and a memory film. A support pillar structure extends through at least an upper alternating stack, and includes a dummy memory film and a dummy memory film. The support pillar structure may be narrower than the memory opening fill structure at a bottommost layer of the upper alternating stack. Additionally or alternatively, the dummy memory film may be located above a horizontal plane including a topmost surface of a lower alternating stack. Optionally, another support pillar structure including a dielectric material may be provided underneath the support pillar structure in the lower alternating stack. A dielectric material can be provided at levels of the lower alternating stack in a support pillar structure to reduce inter-level leakage current."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Support pillar structures for leakage reduction in a three-dimensional memory device and methods of making the same","description":"Multiple tier structures including a respective alternating stack of insulating layers and electrically conductive layers is formed over a substrate. A memory opening fill structure extends through th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475879","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475879","citation_suggestion":"Patentable. \"Support pillar structures for leakage reduction in a three-dimensional memory device and methods of making the same\" (US-10475879). https://patentable.app/patents/US-10475879","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475879","json":"https://patentable.app/api/llm-context/US-10475879","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:26:01.356Z"}