{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475884","patent":{"patent_number":"US-10475884","title":"Tunnel field-effect transistor and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2018-07-16T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"Tunnel field-effect transistors and fabrication methods are provided. An exemplary fabrication method includes providing a semiconductor substrate; forming a gate structure having a first side and an opposing second side on the semiconductor substrate; and forming a first doped source/drain layer in the semiconductor substrate at the first side of the gate structure. The first doped source/drain layer is doped with a first type of doping ions and a first contact interface between the first doped source/drain layer and the channel region has protruding structures protruding toward a channel region under the gate structure. The method also includes forming a second doped source/drain layer in the semiconductor substrate at the second side of the gate structure. The second doped source/drain layer is doped with a second type of doping ions having a conductivity opposite to the first doped source/drain layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Tunnel field-effect transistor and fabrication method thereof","description":"Tunnel field-effect transistors and fabrication methods are provided. An exemplary fabrication method includes providing a semiconductor substrate; forming a gate structure having a first side and an ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475884","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475884","citation_suggestion":"Patentable. \"Tunnel field-effect transistor and fabrication method thereof\" (US-10475884). https://patentable.app/patents/US-10475884","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475884","json":"https://patentable.app/api/llm-context/US-10475884","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:36:53.728Z"}