{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475885","patent":{"patent_number":"US-10475885","title":"Semiconductor substrate structures and semiconductor devices","assignee":null,"inventors":[],"filing_date":"2018-01-02T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":16,"abstract":"A semiconductor substrate structure includes a semiconductor substrate (P-type), a first buried well region (N-type) disposed in the semiconductor substrate, a first buried layer (N-type) and a second buried layer (P-type) disposed in the semiconductor substrate and on the first buried well region. The first buried layer has a first portion and a second portion. The second buried layer is located between the first portion and the second portion. A top surface of the first portion, a top surface of the second buried layer, and a top surface of the second portion are level with a top surface of the semiconductor substrate, a sidewall of the first portion is aligned with a sidewall of the first buried well region, and a sidewall of the second portion is aligned with another sidewall of the first buried well region. A semiconductor device includes the semiconductor substrate structure and an epitaxial layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor substrate structures and semiconductor devices","description":"A semiconductor substrate structure includes a semiconductor substrate (P-type), a first buried well region (N-type) disposed in the semiconductor substrate, a first buried layer (N-type) and a second","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475885","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475885","citation_suggestion":"Patentable. \"Semiconductor substrate structures and semiconductor devices\" (US-10475885). https://patentable.app/patents/US-10475885","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475885","json":"https://patentable.app/api/llm-context/US-10475885","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:23:12.338Z"}