{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475887","patent":{"patent_number":"US-10475887","title":"Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-02-05T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10−5 Å or less is observed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device","description":"An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475887","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475887","citation_suggestion":"Patentable. \"Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device\" (US-10475887). https://patentable.app/patents/US-10475887","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475887","json":"https://patentable.app/api/llm-context/US-10475887","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:17:50.586Z"}