{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475894","patent":{"patent_number":"US-10475894","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-05-08T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroco","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475894","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475894","citation_suggestion":"Patentable. \"Semiconductor device\" (US-10475894). https://patentable.app/patents/US-10475894","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475894","json":"https://patentable.app/api/llm-context/US-10475894","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:14:00.283Z"}