{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475895","patent":{"patent_number":"US-10475895","title":"Semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2017-06-21T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor device includes a substrate, a first dielectric layer, a first device and a second device. The first dielectric layer is disposed on the substrate. The first device is disposed on the first dielectric layer on a first region of the substrate, and includes two first spacers, a second dielectric layer and a first gate structure. The first spacers are separated to form a first trench. The second dielectric layer is disposed on side surfaces and a bottom surface of the first trench. The first gate structure is disposed on the second dielectric layer. The second device is disposed on a second region of the substrate, and includes two second spacers and a second gate structure. The second spacers are disposed on the first dielectric layer and are separated to form a second trench. The second gate structure is disposed on the substrate within the second trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing the same","description":"A semiconductor device includes a substrate, a first dielectric layer, a first device and a second device. The first dielectric layer is disposed on the substrate. The first device is disposed on the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475895","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475895","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing the same\" (US-10475895). https://patentable.app/patents/US-10475895","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475895","json":"https://patentable.app/api/llm-context/US-10475895","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:21:48.906Z"}