{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475913","patent":{"patent_number":"US-10475913","title":"Epitaxial structure of N-face AlGaN/GaN, active device, and method for fabricating the same with integration and polarity inversion","assignee":null,"inventors":[],"filing_date":"2018-09-07T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":23,"abstract":"The present invention provides an epitaxial structure of N-face AlGaN/GaN, its active device, and the method for fabricating the same. The structure comprises a substrate, a C-doped buffer layer on the substrate, a C-doped i-GaN layer on the C-doped buffer layer, a i-AlyGaN buffer layer on the C-doped i-GaN layer, an i-GaN channel layer on the C-doped i-AlyGaN buffer layer, and an i-AlxGaN layer on the i-GaN channel layer, where x=0.1˜0.3 and y=0.05˜0.75. By using the p-GaN inverted trapezoidal gate or anode structure in device design, the 2DEG in the epitaxial structure of N-face AlGaN/GaN below the p-GaN inverted trapezoidal gate structure will be depleted. Then the 2DEG is located at the junction between the i-GaN channel layer and the i-AlyGaN layer, and thus fabricating p-GaN gate enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Epitaxial structure of N-face AlGaN/GaN, active device, and method for fabricating the same with integration and polarity inversion","description":"The present invention provides an epitaxial structure of N-face AlGaN/GaN, its active device, and the method for fabricating the same. The structure comprises a substrate, a C-doped buffer layer on th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475913","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475913","citation_suggestion":"Patentable. \"Epitaxial structure of N-face AlGaN/GaN, active device, and method for fabricating the same with integration and polarity inversion\" (US-10475913). https://patentable.app/patents/US-10475913","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475913","json":"https://patentable.app/api/llm-context/US-10475913","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:13:12.757Z"}