{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475915","patent":{"patent_number":"US-10475915","title":"Semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2019-03-20T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first layer, a second layer, a third layer, and an insulating layer. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first layer includes at least one of Alx1Ga1-x1N (0<x1<1) or p-type Alz1Ga1-z1N (0≤z1<1) and has a first surface, a second surface, and a third surface. The second layer includes Alx2Ga1-x2N (0≤x2<1 and x2<x1) and includes a first partial region, a second partial region, and a third partial region. The third layer includes Alx3Ga1-x3N (0<x3<1 and x2<x3) and includes a fourth partial region, a fifth partial region, and a sixth partial region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing the same","description":"According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first layer, a second layer, a third layer, and an insulating layer. A position","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475915","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475915","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing the same\" (US-10475915). https://patentable.app/patents/US-10475915","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475915","json":"https://patentable.app/api/llm-context/US-10475915","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:28:47.235Z"}