{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475928","patent":{"patent_number":"US-10475928","title":"Semiconductor structure and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2018-05-21T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Semiconductor structures and fabrication methods thereof are provided. An exemplary fabrication process includes providing a semiconductor substrate having a first region and a second region and having a plurality of first fins in the first region and a plurality of second fins in the second region; performing a first oxidation process on the first fins to form a first oxide layer on surfaces of the first fins and to cause corners between top surfaces and side surface of the first fins to form first rounded corners; and performing a second oxidation process on the second fins to form a second oxide layer on surfaces of the second fins and to cause corners between top surfaces and side surface of the second fins to form second rounded corners. A radius of curvature of the first rounded corner is different from a radius of curvature of the second rounded corner."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and fabrication method thereof","description":"Semiconductor structures and fabrication methods thereof are provided. An exemplary fabrication process includes providing a semiconductor substrate having a first region and a second region and havin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475928","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475928","citation_suggestion":"Patentable. \"Semiconductor structure and fabrication method thereof\" (US-10475928). https://patentable.app/patents/US-10475928","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475928","json":"https://patentable.app/api/llm-context/US-10475928","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:34:48.481Z"}