{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475931","patent":{"patent_number":"US-10475931","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2017-10-24T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator over a substrate; a first oxide over the first insulator; a second oxide in contact with at least a portion of the top surface of the first oxide; a second insulator over the second oxide; a first conductor over the second insulator; a second conductor over the first conductor; a third insulator over the second conductor; a fourth insulator in contact with side surfaces of the second insulator, the first conductor, the second conductor, and the third insulator; and a fifth insulator in contact with the top surface of the second oxide and a side surface of the fourth insulator. The top surface of the fourth insulator is substantially aligned with the top surface of the third insulator."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator over a substrate; a first oxide over the first insulator; a second","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475931","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475931","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-10475931). https://patentable.app/patents/US-10475931","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475931","json":"https://patentable.app/api/llm-context/US-10475931","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:34:13.789Z"}