{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10475991","patent":{"patent_number":"US-10475991","title":"Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices","assignee":null,"inventors":[],"filing_date":"2018-02-22T00:00:00.000Z","publication_date":"2019-11-12T00:00:00.000Z","cpc_codes":["B82Y","G11C"],"num_claims":21,"abstract":"A process flow for forming magnetic tunnel junction (MTJ) cells with a critical dimension CD≤60 nm by using a top electrode (TE) hard mask having a thickness ≥100 nm prior to MTJ etching is disclosed. A carbon hard mask (HM), silicon HM, and photoresist are sequentially formed on a MTJ stack of layers. A pattern of openings in the photoresist is transferred through the Si HM with a first reactive ion etch (RIE), and through the carbon HM with a second RIE. After TE material is deposited to fill the openings, a chemical mechanical process is performed to remove all layers above the carbon HM. The carbon HM is stripped and the resulting TE pillars are trimmed to a CD≤60 nm while maintaining a thickness proximate to 100 nm. Thereafter, an etch process forms MTJ cells while TE thickness is maintained at ≥70 nm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices","description":"A process flow for forming magnetic tunnel junction (MTJ) cells with a critical dimension CD≤60 nm by using a top electrode (TE) hard mask having a thickness ≥100 nm prior to MTJ etching is disclosed.","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10475991","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10475991","citation_suggestion":"Patentable. \"Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices\" (US-10475991). https://patentable.app/patents/US-10475991","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10475991","json":"https://patentable.app/api/llm-context/US-10475991","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:23:37.435Z"}