{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10482200","patent":{"patent_number":"US-10482200","title":"Modeling random dopant fluctuations in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2014-01-02T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["G06F"],"num_claims":18,"abstract":"In one embodiment, the invention comprises: defining a first volume in a layer of a semiconductor device; calculating a probability of finding at least one dopant atom in the first volume, based on a dopant distribution of the layer; in the case that the calculated probability is equal to or greater than a pre-determined threshold, defining at least one additional volume in the layer substantially equal to the first volume; and in the case that the calculated probability is less than the pre-determined threshold: aggregating the first volume with a second volume adjacent the first volume, the second volume being substantially equal to the first volume; and recalculating a probability of finding at least one dopant atom in the aggregated first and second volumes, based on the dopant distribution of the layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Modeling random dopant fluctuations in semiconductor devices","description":"In one embodiment, the invention comprises: defining a first volume in a layer of a semiconductor device; calculating a probability of finding at least one dopant atom in the first volume, based on a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10482200","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10482200","citation_suggestion":"Patentable. \"Modeling random dopant fluctuations in semiconductor devices\" (US-10482200). https://patentable.app/patents/US-10482200","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10482200","json":"https://patentable.app/api/llm-context/US-10482200","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:34:53.606Z"}