{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10482951","patent":{"patent_number":"US-10482951","title":"1T1D DRAM cell and access method and associated device for DRAM","assignee":null,"inventors":[],"filing_date":"2017-09-04T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":4,"abstract":"The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor number for increasing integration density, but it will diminish the stability of memory, and also may enhance the complexity of access circuit, thus increasing the power consumption. For increasing the integration density of SRAM, and according to the electrical characteristics of reduced transistor number therefore designing the memory possess low power consumption and its corresponding circuits, and then implementing an access system. If electrical characteristic of the other various memories are similar to SRAM, such as Dynamic Random-Access Memory (DRAM), so they can also use the corresponding access circuit of SRAM."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"1T1D DRAM cell and access method and associated device for DRAM","description":"The beginning of using Complementary Metal-Oxide-Semiconductor (CMOS) process technology to implement Static Random-Access Memory (SRAM) which transistor number is six. And then reducing transistor nu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10482951","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10482951","citation_suggestion":"Patentable. \"1T1D DRAM cell and access method and associated device for DRAM\" (US-10482951). https://patentable.app/patents/US-10482951","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10482951","json":"https://patentable.app/api/llm-context/US-10482951","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:30:02.098Z"}