{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10482975","patent":{"patent_number":"US-10482975","title":"Flash memory cell with dual erase modes for increased cell endurance","assignee":null,"inventors":[],"filing_date":"2018-06-14T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":9,"abstract":"An integrated circuit device may at least one memory cell configured for dual erase modes. Each memory cell may be configured to be erased via two different nodes, which may be selectively used (e.g., in any switched or alternating manner) to reduce the erase cycling at each individual node and thereby increase (e.g., double) the lifespan of the cell. For example, the device may include flash memory cells having a pair of program/erase nodes (e.g., an erase gate and a word line) formed over each respective floating gate, wherein the program/erase nodes are selectively used (e.g., in any switched or alternating manner) for the cell erase function."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Flash memory cell with dual erase modes for increased cell endurance","description":"An integrated circuit device may at least one memory cell configured for dual erase modes. Each memory cell may be configured to be erased via two different nodes, which may be selectively used (e.g.,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10482975","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10482975","citation_suggestion":"Patentable. \"Flash memory cell with dual erase modes for increased cell endurance\" (US-10482975). https://patentable.app/patents/US-10482975","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10482975","json":"https://patentable.app/api/llm-context/US-10482975","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:06:08.196Z"}