{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10482987","patent":{"patent_number":"US-10482987","title":"Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory","assignee":null,"inventors":[],"filing_date":"2017-04-14T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G06N"],"num_claims":14,"abstract":"A magnetic wall utilization spin MOSFET includes a magnetic wall driving layer including a magnetic wall, a first region, a second region, and a third region located between the first region and the second region, a channel layer, a magnetization free layer provided at a first end portion of a first surface of the channel layer, and arranged so as to be in contact with the third region of the magnetic wall driving layer, a magnetization fixed layer provided at a second end portion opposite to the first end portion, and a gate electrode provided between the first end portion and the second end portion of the channel layer through a gate insulating layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory","description":"A magnetic wall utilization spin MOSFET includes a magnetic wall driving layer including a magnetic wall, a first region, a second region, and a third region located between the first region and the s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10482987","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10482987","citation_suggestion":"Patentable. \"Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory\" (US-10482987). https://patentable.app/patents/US-10482987","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10482987","json":"https://patentable.app/api/llm-context/US-10482987","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:20:52.458Z"}