{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483105","patent":{"patent_number":"US-10483105","title":"Nanowire bending for planar device process on (001) Si substrates","assignee":null,"inventors":[],"filing_date":"2016-05-13T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L","B82Y","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","B82Y"],"num_claims":20,"abstract":"Provided is a method for growing a nanowire, including: providing a substrate with a base portion having a first surface and at least one support structure extending above or below the first surface; forming a dielectric coating on the at least one support structure; forming a photoresist coating over the substrate; forming a metal coating over at least a portion of the dielectric coating; removing a portion of the dielectric coating to expose a surface of the at least one support structure; removing a portion of the at least one support structure to form a nanowire growth surface; growing at least one nanowire on the nanowire growth surface of a corresponding one of the at least one support structure, wherein the nanowire comprises a root end attached to the growth surface and an opposing, free end extending from the root end; and elastically bending the at least one nanowire."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nanowire bending for planar device process on (001) Si substrates","description":"Provided is a method for growing a nanowire, including: providing a substrate with a base portion having a first surface and at least one support structure extending above or below the first surface; ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483105","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483105","citation_suggestion":"Patentable. \"Nanowire bending for planar device process on (001) Si substrates\" (US-10483105). https://patentable.app/patents/US-10483105","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483105","json":"https://patentable.app/api/llm-context/US-10483105","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:08:39.670Z"}