{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483112","patent":{"patent_number":"US-10483112","title":"Metal gate stack having TaAlCN layer","assignee":null,"inventors":[],"filing_date":"2018-07-23T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Gate stacks for improving integrated circuit device performance and methods for fabricating such gate stacks are disclosed herein. An exemplary method includes forming a gate stack over a substrate and at least partially removing the gate stack, thereby forming an opening. A multi-function layer is deposited in the opening and a work function layer is deposited over the multi-function layer. The multi-function layer includes nitrogen and one of titanium or tantalum. The work function layer includes nitrogen and one of titanium or tantalum. A concentration of the nitrogen of the work function layer is different than a concentration of the nitrogen of the multi-function layer. In some implementations, the concentration of the nitrogen of the work function layer from about 2% to about 5% and the concentration of the nitrogen of the multi-function layer from about 5% to about 15%."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Metal gate stack having TaAlCN layer","description":"Gate stacks for improving integrated circuit device performance and methods for fabricating such gate stacks are disclosed herein. An exemplary method includes forming a gate stack over a substrate an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483112","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483112","citation_suggestion":"Patentable. \"Metal gate stack having TaAlCN layer\" (US-10483112). https://patentable.app/patents/US-10483112","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483112","json":"https://patentable.app/api/llm-context/US-10483112","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:01:56.428Z"}