{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483220","patent":{"patent_number":"US-10483220","title":"Method of manufacturing semiconductor devices and corresponding device","assignee":null,"inventors":[],"filing_date":"2016-08-17T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"In one embodiment, a method manufactures a semiconductor device including metallizations having peripheral portions with one or more underlying layers having marginal regions extending facing the peripheral portions. The method includes: providing a sacrificial layer to cover the marginal regions of the underlying layer, providing the metallizations while the marginal regions of the underlying layer are covered by the sacrificial layer, and removing the sacrificial layer so that the marginal regions of the underlying layer extend facing the peripheral portions in the absence of contact interface therebetween, thereby avoiding thermo-mechanical stresses."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor devices and corresponding device","description":"In one embodiment, a method manufactures a semiconductor device including metallizations having peripheral portions with one or more underlying layers having marginal regions extending facing the peri","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483220","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483220","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor devices and corresponding device\" (US-10483220). https://patentable.app/patents/US-10483220","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483220","json":"https://patentable.app/api/llm-context/US-10483220","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:56:55.899Z"}