{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483259","patent":{"patent_number":"US-10483259","title":"Series resistor over drain region in high voltage device","assignee":null,"inventors":[],"filing_date":"2018-04-02T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Some embodiments relate to an integrated circuit. The integrated circuit includes a ring-shaped drain region having an inner edge and an outer edge. A channel region surrounds the ring-shaped drain region. A source region surrounds the channel region. The channel region separates the drain region from the source region. A gate electrode is arranged over the channel region and is separated from the channel region by a gate dielectric. An inner edge of the gate electrode is proximate to the drain region. A resistor structure is arranged over and spaced apart from an upper surface of the substrate. The resistor structure has a first end and a second end which are connected by a curved or polygonal path of resistive material. The first end is coupled to the ring-shaped drain. The resistor has an outer perimeter that is surrounded by the inner edge of the ring-shaped drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Series resistor over drain region in high voltage device","description":"Some embodiments relate to an integrated circuit. The integrated circuit includes a ring-shaped drain region having an inner edge and an outer edge. A channel region surrounds the ring-shaped drain re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483259","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483259","citation_suggestion":"Patentable. \"Series resistor over drain region in high voltage device\" (US-10483259). https://patentable.app/patents/US-10483259","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483259","json":"https://patentable.app/api/llm-context/US-10483259","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:03:28.715Z"}