{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483267","patent":{"patent_number":"US-10483267","title":"Eight-transistor static random-access memory, layout thereof, and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2018-03-29T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each. A first doped concentration of impurities doped in channel regions of the second pull-down transistor and the read pull-down transistor is greater than a second doped concentration of the impurities doped in a channel region of the first pull-down transistor, or the impurities are doped in the channel regions of the second pull-down transistor and the read pull-down transistor and are not doped in the channel region of the first pull-down transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Eight-transistor static random-access memory, layout thereof, and method for manufacturing the same","description":"A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a seco","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483267","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483267","citation_suggestion":"Patentable. \"Eight-transistor static random-access memory, layout thereof, and method for manufacturing the same\" (US-10483267). https://patentable.app/patents/US-10483267","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483267","json":"https://patentable.app/api/llm-context/US-10483267","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:25:49.962Z"}