{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483344","patent":{"patent_number":"US-10483344","title":"Fabrication of a MIM capacitor structure with via etch control with integrated maskless etch tuning layers","assignee":null,"inventors":[],"filing_date":"2018-04-26T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"A semiconductor device includes a base structure including contacts and a first interlevel dielectric (ILD) layer, a metal-insulator metal (MIM) capacitor structure on the base structure, a second ILD layer on the MIM capacitor structure, and a plurality of vias including a first via on a first one of the contacts and penetrating through the first and second ILD layers, first and third etch tuning layers of the MIM capacitor structure and a second plate of the MIM capacitor structure, and a second via on a second one of the contacts and penetrating through the first and second ILD layers, a second etch tuning layer of the MIM capacitor structure, and first and third plates of the MIM capacitor structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabrication of a MIM capacitor structure with via etch control with integrated maskless etch tuning layers","description":"A semiconductor device includes a base structure including contacts and a first interlevel dielectric (ILD) layer, a metal-insulator metal (MIM) capacitor structure on the base structure, a second ILD","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483344","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483344","citation_suggestion":"Patentable. \"Fabrication of a MIM capacitor structure with via etch control with integrated maskless etch tuning layers\" (US-10483344). https://patentable.app/patents/US-10483344","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483344","json":"https://patentable.app/api/llm-context/US-10483344","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:00:40.028Z"}