{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483360","patent":{"patent_number":"US-10483360","title":"Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-12-06T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"A method of manufacturing a semiconductor device is providing, which includes forming a trench in a semiconductor substrate, forming an oxide layer over sidewalls and over a bottom side of the trench, performing an ion implantation process, forming a cover layer, and patterning the covering layer, thereby forming an uncovered area and a covered area of the oxide layer, respectively. The method further includes performing an isotropic etching process thereby removing portions of the uncovered area of the oxide layer and removing a part of a surface portion of the covered area adjacent to the uncovered portions, and removing remaining portions of the covering layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device","description":"A method of manufacturing a semiconductor device is providing, which includes forming a trench in a semiconductor substrate, forming an oxide layer over sidewalls and over a bottom side of the trench,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483360","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483360","citation_suggestion":"Patentable. \"Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device\" (US-10483360). https://patentable.app/patents/US-10483360","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483360","json":"https://patentable.app/api/llm-context/US-10483360","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:57:54.374Z"}