{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483363","patent":{"patent_number":"US-10483363","title":"Methods of forming a gate contact structure above an active region of a transistor","assignee":null,"inventors":[],"filing_date":"2017-04-28T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"One method includes forming a gate above a semiconductor substrate, the gate comprising a gate structure and a gate cap positioned above the gate structure, forming a conductive source/drain metallization structure adjacent the gate in each of the source/drain regions and forming a recess in each of the conductive source/drain metallization structures. The method further includes forming a spacer structure that comprises recess filling portions that substantially fill the recesses and a portion that extends across the gate cap, wherein a portion of the gate cap is exposed within the spacer structure, forming an insulating material within the spacer structure and on the exposed portion of the gate cap, forming a gate contact opening that exposes a portion of an upper surface of the gate structure and forming a conductive gate contact structure (CB) in the conductive gate contact opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming a gate contact structure above an active region of a transistor","description":"One method includes forming a gate above a semiconductor substrate, the gate comprising a gate structure and a gate cap positioned above the gate structure, forming a conductive source/drain metalliza","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483363","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483363","citation_suggestion":"Patentable. \"Methods of forming a gate contact structure above an active region of a transistor\" (US-10483363). https://patentable.app/patents/US-10483363","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483363","json":"https://patentable.app/api/llm-context/US-10483363","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:33:06.294Z"}