{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483370","patent":{"patent_number":"US-10483370","title":"Semiconductor structure with unleveled gate structure","assignee":null,"inventors":[],"filing_date":"2017-11-09T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Semiconductor structures are provided. The semiconductor structure includes a fin structure formed over a substrate and a gate structure formed across the fin structure. In addition, the gate structure includes a gate dielectric layer formed over the substrate and a work function metal layer formed over a portion of the gate dielectric layer. The gate structure further includes a gate electrode layer formed over a portion of the work function metal layer. In addition, a top surface of the gate electrode layer is located at a position that is higher than that of a top surface of the gate dielectric layer, and the top surface of the gate dielectric layer is located at a position that is higher than that of a top surface of the work function layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure with unleveled gate structure","description":"Semiconductor structures are provided. The semiconductor structure includes a fin structure formed over a substrate and a gate structure formed across the fin structure. In addition, the gate structur","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483370","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483370","citation_suggestion":"Patentable. \"Semiconductor structure with unleveled gate structure\" (US-10483370). https://patentable.app/patents/US-10483370","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483370","json":"https://patentable.app/api/llm-context/US-10483370","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:06:38.573Z"}