{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483376","patent":{"patent_number":"US-10483376","title":"Method for producing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-07-24T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":1,"abstract":"A method for producing a semiconductor device includes depositing a first insulating film and a second insulating film on a planar semiconductor layer formed on a substrate; forming a first hole for forming a gate electrode in the second insulating film; filling the first hole with a first metal to form the gate electrode; forming a side wall formed of a third insulating film on an upper surface of the gate electrode and a side surface of the first hole; performing etching through, as a mask, the side wall formed of the third insulating film, to form a second hole in the gate electrode and the first insulating film; forming a gate insulating film on a side surface of the second hole; and epitaxially growing a semiconductor layer, within the second hole, on the planar semiconductor layer to form a first pillar-shaped semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing a semiconductor device","description":"A method for producing a semiconductor device includes depositing a first insulating film and a second insulating film on a planar semiconductor layer formed on a substrate; forming a first hole for f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483376","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483376","citation_suggestion":"Patentable. \"Method for producing a semiconductor device\" (US-10483376). https://patentable.app/patents/US-10483376","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483376","json":"https://patentable.app/api/llm-context/US-10483376","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:58:41.670Z"}