{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483386","patent":{"patent_number":"US-10483386","title":"Semiconductor device, transistor having doped seed layer and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-01-17T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a substrate, and a seed layer over the substrate, wherein the seed layer comprises carbon dopants. The semiconductor device further includes a channel layer over the seed layer, and an active layer over the channel layer, wherein the active layer has a band gap discontinuity with the channel layer. A method of making a transistor includes forming a seed layer over a substrate, and doping the seed layer, wherein doping the seed layer comprises introducing carbon dopants into the seed layer. The method further includes forming a channel layer over the seed layer, and forming an active layer over the channel layer, wherein the active layer has a band gap discontinuity with the channel layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device, transistor having doped seed layer and method of manufacturing the same","description":"A semiconductor device includes a substrate, and a seed layer over the substrate, wherein the seed layer comprises carbon dopants. The semiconductor device further includes a channel layer over the se","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483386","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483386","citation_suggestion":"Patentable. \"Semiconductor device, transistor having doped seed layer and method of manufacturing the same\" (US-10483386). https://patentable.app/patents/US-10483386","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483386","json":"https://patentable.app/api/llm-context/US-10483386","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:46:50.905Z"}