{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483396","patent":{"patent_number":"US-10483396","title":"Interfacial layer between fin and source/drain region","assignee":null,"inventors":[],"filing_date":"2018-06-11T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"An embodiment is a semiconductor structure. The semiconductor structure includes a substrate. A fin is on the substrate. The fin includes silicon germanium. An interfacial layer is over the fin. The interfacial layer has a thickness in a range from greater than 0 nm to about 4 nm. A source/drain region is over the interfacial layer. The source/drain region includes silicon germanium."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Interfacial layer between fin and source/drain region","description":"An embodiment is a semiconductor structure. The semiconductor structure includes a substrate. A fin is on the substrate. The fin includes silicon germanium. An interfacial layer is over the fin. The i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483396","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483396","citation_suggestion":"Patentable. \"Interfacial layer between fin and source/drain region\" (US-10483396). https://patentable.app/patents/US-10483396","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483396","json":"https://patentable.app/api/llm-context/US-10483396","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:25:11.920Z"}