{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483457","patent":{"patent_number":"US-10483457","title":"Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array","assignee":null,"inventors":[],"filing_date":"2018-08-14T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":8,"abstract":"Aspects of the disclosure provide magnetoresistive random access memory (MRAM) and methods. The MRAM generally includes a first magnetic tunnel junction (MTJ) storage element comprising a first fixed layer, a first insulating layer, and a first free layer, and a second MTJ storage element comprising a second fixed layer, a second insulating layer, and a second free layer. The MRAM further includes a conductive layer connected to a source line, first bit line, and a second bit line, wherein the first MTJ storage element is disposed above and connected to the conductive layer and the first bit line at a first end and connected to the first bit line at a second end, and wherein the second MTJ storage element is disposed above and connected to the conductive layer and the second bit line at a first end and connected to the second bit line at a second end."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array","description":"Aspects of the disclosure provide magnetoresistive random access memory (MRAM) and methods. The MRAM generally includes a first magnetic tunnel junction (MTJ) storage element comprising a first fixed ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483457","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483457","citation_suggestion":"Patentable. \"Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array\" (US-10483457). https://patentable.app/patents/US-10483457","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483457","json":"https://patentable.app/api/llm-context/US-10483457","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:24:18.967Z"}