{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10483460","patent":{"patent_number":"US-10483460","title":"Method of manufacturing a magnetoresistive stack/ structure using plurality of encapsulation layers","assignee":null,"inventors":[],"filing_date":"2016-10-28T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"A method of manufacturing a magnetoresistive stack/structure comprising etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer; depositing a first encapsulation layer on the sidewalls of the second magnetic region and over the dielectric layer; etching the first encapsulation layer which is disposed over the exposed surface of the dielectric layer. The method further includes (a) depositing a second encapsulation layer: (i) on the first encapsulation layer disposed on the sidewalls of the second magnetic region and (ii) over the exposed surface of the dielectric layer and (b) depositing a third encapsulation layer: (i) on the second encapsulation layer which is on the first encapsulation layer and the exposed surface of the dielectric layer. The method also includes etching the remaining layers of the stack/structure (via one or more etch processes)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a magnetoresistive stack/ structure using plurality of encapsulation layers","description":"A method of manufacturing a magnetoresistive stack/structure comprising etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10483460","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10483460","citation_suggestion":"Patentable. \"Method of manufacturing a magnetoresistive stack/ structure using plurality of encapsulation layers\" (US-10483460). https://patentable.app/patents/US-10483460","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10483460","json":"https://patentable.app/api/llm-context/US-10483460","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:24:17.397Z"}