{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10485111","patent":{"patent_number":"US-10485111","title":"Via and skip via structures","assignee":null,"inventors":[],"filing_date":"2017-07-12T00:00:00.000Z","publication_date":"2019-11-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"The present disclosure generally relates to semiconductor structures and, more particularly, to via and skip via structures and methods of manufacture. The method includes: forming a first metallization layer with a first capping layer over the first metallization layer; forming a second metallization layer with a second capping layer over the second metallization layer; forming a partial skip via structure to the first metallization layer by removing a portion of the first capping layer and the second capping and depositing conductive material in an opening formed in the second metallization layer; forming a third capping layer over the filled partial skip via and the second capping layer; and forming a remaining portion of a skip via structure in alignment with the partial skip via structure by opening the third capping layer to expose the conductive material of the partial skip via."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Via and skip via structures","description":"The present disclosure generally relates to semiconductor structures and, more particularly, to via and skip via structures and methods of manufacture. The method includes: forming a first metallizati","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10485111","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10485111","citation_suggestion":"Patentable. \"Via and skip via structures\" (US-10485111). https://patentable.app/patents/US-10485111","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10485111","json":"https://patentable.app/api/llm-context/US-10485111","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:35:10.193Z"}