{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10488364","patent":{"patent_number":"US-10488364","title":"Thermally stable ammonia gas sensor using ZnO-functionalized AlGaN/GaN heterostructure transistor","assignee":null,"inventors":[],"filing_date":"2018-04-26T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["G01N","G01N","H01L","G01N","G01N"],"num_claims":18,"abstract":"Methods and apparatuses for detecting ammonia are disclosed. A sensor can include a transistor having a gate, a drain, and a source. A layer of ammonia detecting material can be functionally attached to the transistor. The ammonia detecting material can be zinc oxide (ZnO) nanorods, which effectively functionalize the transistor by changing the amount of current that flows through the gate when a voltage is applied. Alternatively, or in addition to ZnO nanorods, films or nanostructure type metal oxides including TiO2, ITO, ZnO, WO3 and AZO can be used. The transistor is preferably a high electron mobility transistor (HEMT)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thermally stable ammonia gas sensor using ZnO-functionalized AlGaN/GaN heterostructure transistor","description":"Methods and apparatuses for detecting ammonia are disclosed. A sensor can include a transistor having a gate, a drain, and a source. A layer of ammonia detecting material can be functionally attached ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10488364","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10488364","citation_suggestion":"Patentable. \"Thermally stable ammonia gas sensor using ZnO-functionalized AlGaN/GaN heterostructure transistor\" (US-10488364). https://patentable.app/patents/US-10488364","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10488364","json":"https://patentable.app/api/llm-context/US-10488364","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T12:45:11.747Z"}