{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490247","patent":{"patent_number":"US-10490247","title":"Memory element","assignee":null,"inventors":[],"filing_date":"2016-07-25T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":10,"abstract":"A memory element includes a free magnetization layer (“FR-ML”) in a film form, a nonmagnetic layer (“NML”), and a fixed magnetization layer (“FX-ML”), The NML and FX-ML are stacked on the FR-ML. The FR ML stores a single bit of data “0” or “1” according to a magnetization direction and rewrites the data by reversing the magnetization direction. An antiferromagnet that exhibits the anomalous Hall effect and has a reversible magnetization direction is used for the FR-M. The reversal of the magnetization direction of the FR-ML is performed using the FX-ML by the spin-transfer torque technique. To read data, a reading current is caused to flow in one direction, and a Hall voltage generated in the FR-ML by the anomalous Hall effect is extracted from the FR-ML. The polarity of the Hall voltage is reversed in accordance with the magnetization direction of the FR-ML."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory element","description":"A memory element includes a free magnetization layer (“FR-ML”) in a film form, a nonmagnetic layer (“NML”), and a fixed magnetization layer (“FX-ML”), The NML and FX-ML are stacked on the FR-ML. The F","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490247","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490247","citation_suggestion":"Patentable. \"Memory element\" (US-10490247). https://patentable.app/patents/US-10490247","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490247","json":"https://patentable.app/api/llm-context/US-10490247","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:35:50.990Z"}