{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490275","patent":{"patent_number":"US-10490275","title":"Resistive memory storage apparatus and writing method thereof including disturbance voltage","assignee":null,"inventors":[],"filing_date":"2018-07-30T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"A writing method of a resistive memory storage apparatus is provided. The writing method includes: applying a first set voltage on a memory cell, and acquiring a first reading current of the memory cell; applying a first disturbance voltage on the memory cell, and acquiring a second reading current of the memory cell; and determining to apply a second set voltage or a second disturbance voltage on the memory cell according to a magnitude relationship between the first reading current and the second reading current. An absolute value of the first disturbance voltage is smaller than an absolute value of a reset voltage, and an absolute value of the second disturbance voltage is smaller than an absolute value of the second set voltage. In addition, a resistive memory storage apparatus is also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistive memory storage apparatus and writing method thereof including disturbance voltage","description":"A writing method of a resistive memory storage apparatus is provided. The writing method includes: applying a first set voltage on a memory cell, and acquiring a first reading current of the memory ce","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490275","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490275","citation_suggestion":"Patentable. \"Resistive memory storage apparatus and writing method thereof including disturbance voltage\" (US-10490275). https://patentable.app/patents/US-10490275","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490275","json":"https://patentable.app/api/llm-context/US-10490275","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:31:47.896Z"}