{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490400","patent":{"patent_number":"US-10490400","title":"Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium","assignee":null,"inventors":[],"filing_date":"2018-03-22T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"There is provided a technique that includes forming a nitride film on a pattern including a concave portion formed in a surface of a substrate by repeating a cycle. The cycle includes non-simultaneously performing: (a) forming a first layer by supplying a precursor gas to the substrate; (b) forming an NH-terminated second layer by supplying a hydrogen nitride-based gas to the substrate to nitride the first layer; and (c) modifying a part of the NH termination to an N termination, and maintaining another part of the NH termination as it is without modifying the another part to the N termination by plasma-exciting and supplying a nitrogen gas to the substrate, wherein in (c), an N termination ratio in an upper portion of the concave portion of the pattern is made higher than an N termination ratio in a lower portion of the concave portion of the pattern."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium","description":"There is provided a technique that includes forming a nitride film on a pattern including a concave portion formed in a surface of a substrate by repeating a cycle. The cycle includes non-simultaneous","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490400","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490400","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium\" (US-10490400). https://patentable.app/patents/US-10490400","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490400","json":"https://patentable.app/api/llm-context/US-10490400","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:37:38.475Z"}