{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490407","patent":{"patent_number":"US-10490407","title":"Method of making a semiconductor switch device","assignee":null,"inventors":[],"filing_date":"2018-02-01T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A method of making a semiconductor switch device. The method includes providing a semiconductor substrate having a major surface and a first semiconductor region having a first conductivity type located adjacent the major surface. The method also includes depositing a gate dielectric on the major surface. The method further includes implanting ions into the first semiconductor region through a mask positioned over the first semiconductor region, thereby to form a well region located in the first semiconductor region. The well region has a second conductivity type different to the first conductivity type. The method also includes depositing and patterning a gate electrode material on the gate dielectric to form a gate electrode located directly above the well region. The method further includes implanting ions into the first semiconductor region to form a source region and a drain region of the semiconductor switch device on either side of the gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of making a semiconductor switch device","description":"A method of making a semiconductor switch device. The method includes providing a semiconductor substrate having a major surface and a first semiconductor region having a first conductivity type locat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490407","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490407","citation_suggestion":"Patentable. \"Method of making a semiconductor switch device\" (US-10490407). https://patentable.app/patents/US-10490407","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490407","json":"https://patentable.app/api/llm-context/US-10490407","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:04:43.019Z"}