{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490408","patent":{"patent_number":"US-10490408","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2018-03-08T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A method for manufacturing a semiconductor device comprises: a stacking process that stacks a p-type semiconductor layer of Group III nitride containing a p-type impurity on a first n-type semiconductor layer of Group III nitride containing an n-type impurity; a p-type ion implantation process that ion-implants the p-type impurity into the p-type semiconductor layer; and a heat treatment process that performs heat treatment to activate the ion-implanted p-type impurity. The p-type ion implantation process and the heat treatment process are performed such that the p-type impurity of the p-type semiconductor layer is diffused into the n-type semiconductor layer to form a first p-type impurity containing region in at least part of the first n-type semiconductor layer and below a region of the p-type semiconductor layer into which the ion implantation has been performed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device","description":"A method for manufacturing a semiconductor device comprises: a stacking process that stacks a p-type semiconductor layer of Group III nitride containing a p-type impurity on a first n-type semiconduct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490408","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490408","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-10490408). https://patentable.app/patents/US-10490408","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490408","json":"https://patentable.app/api/llm-context/US-10490408","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:55:29.094Z"}