{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490411","patent":{"patent_number":"US-10490411","title":"Method for enabling self-aligned lithography on metal contacts and selective deposition using free-standing vertical carbon structures","assignee":null,"inventors":[],"filing_date":"2017-05-19T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"Embodiments described herein generally relate methods for selective deposition of carbon structures. In one embodiment, a method includes forming energized carbon species in a process chamber, diffusing the energized carbon species through a metal layer, wherein the metal layer is disposed on a first surface of a first material that is coplanar with a second surface of a second material, and forming a carbon structure between the first surface of the first material and the metal layer from the energized carbon species. Because the carbon structure is selectively deposited on the first surface and self-aligned to the first material, the possibility of overlay or misalignment of subsequent device layers formed on the first surface of the first material after the removal of the carbon structure is significantly reduced."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for enabling self-aligned lithography on metal contacts and selective deposition using free-standing vertical carbon structures","description":"Embodiments described herein generally relate methods for selective deposition of carbon structures. In one embodiment, a method includes forming energized carbon species in a process chamber, diffusi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490411","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490411","citation_suggestion":"Patentable. \"Method for enabling self-aligned lithography on metal contacts and selective deposition using free-standing vertical carbon structures\" (US-10490411). https://patentable.app/patents/US-10490411","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490411","json":"https://patentable.app/api/llm-context/US-10490411","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:25:53.236Z"}