{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490413","patent":{"patent_number":"US-10490413","title":"Selective growth of silicon nitride","assignee":null,"inventors":[],"filing_date":"2018-01-23T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Methods and apparatuses for selectively depositing silicon nitride on silicon surfaces relative to silicon oxide surfaces and selectively depositing silicon nitride on silicon oxide surfaces relative to silicon surfaces are provided herein. Methods involve blocking one surface while leaving another surface unblocked and selectively depositing silicon nitride on the unblocked surface. The blocked surface may include an organic moiety having an Si—C bond. The method may include blocking one of an exposed hydroxyl-terminated silicon-containing surface and an exposed hydrogen-terminated silicon-containing surface of the substrate. Apparatuses include a process chamber having a pedestal, an outlet, and a controller for providing instructions for causing delivery of a semiconductor substrate to the pedestal, causing introduction of a silicon-containing precursor and causing introduction of a nitrogen-containing reactant without igniting a plasma."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selective growth of silicon nitride","description":"Methods and apparatuses for selectively depositing silicon nitride on silicon surfaces relative to silicon oxide surfaces and selectively depositing silicon nitride on silicon oxide surfaces relative ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490413","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490413","citation_suggestion":"Patentable. \"Selective growth of silicon nitride\" (US-10490413). https://patentable.app/patents/US-10490413","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490413","json":"https://patentable.app/api/llm-context/US-10490413","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:04:22.416Z"}