{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490419","patent":{"patent_number":"US-10490419","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-07-06T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In manufacturing a trench type MOSFET, reliability of a semiconductor device is prevented from being degraded due to a short circuit or lowering of withstand voltage between a trench gate electrode and a source region. To achieve the above, poly-silicon films are formed inside a trench in a main surface of a semiconductor substrate and over the semiconductor substrate. Further, phosphorus is thermally diffused into each poly-silicon film from a phosphorous film over an upper surface of the poly-silicon film. Still further, a silicon oxide film formed in a surface layer of the poly-silicon film by the thermal diffusion process is removed by a first dry etching process using a fluorocarbon gas or a hydroxy-fluorocarbon gas. Then, by performing a second dry etching process using a Cl2 gas etc., an insulating film is exposed and, thereby, a trench gate electrode including the poly-silicon film is formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"In manufacturing a trench type MOSFET, reliability of a semiconductor device is prevented from being degraded due to a short circuit or lowering of withstand voltage between a trench gate electrode an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490419","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490419","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-10490419). https://patentable.app/patents/US-10490419","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490419","json":"https://patentable.app/api/llm-context/US-10490419","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:04:22.138Z"}