{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490440","patent":{"patent_number":"US-10490440","title":"Method for manufacturing bonded SOI wafer","assignee":null,"inventors":[],"filing_date":"2017-04-25T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":2,"abstract":"Method for manufacturing bonded SOI wafer by bonding bond wafer and base wafer each composed of silicon single crystal with insulator film being interposed therebetween, including steps of: depositing polycrystalline silicon layer on bonding surface side of base wafer; polishing surface of polycrystalline silicon layer to obtain polished surface; forming thermal oxide film on polished surface; forming insulator film on bonding surface of bond wafer; bonding step of bonding bond and base wafers by bringing insulator and oxide films into close contact with each other; and thinning bonded bond wafer to form SOI layer, wherein silicon single crystal wafer having resistivity of 100 Ω·cm or more is used as base wafer, thermal oxide film formed on polished surface has thickness of 15 nm or more with RMS of 0.6 nm or less, and any heat treatment after bonding step is performed with maximum treatment temperature of 1150° C. or less."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing bonded SOI wafer","description":"Method for manufacturing bonded SOI wafer by bonding bond wafer and base wafer each composed of silicon single crystal with insulator film being interposed therebetween, including steps of: depositing","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490440","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490440","citation_suggestion":"Patentable. \"Method for manufacturing bonded SOI wafer\" (US-10490440). https://patentable.app/patents/US-10490440","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490440","json":"https://patentable.app/api/llm-context/US-10490440","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:39:53.671Z"}