{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490451","patent":{"patent_number":"US-10490451","title":"Process for fabricating a transistor structure including a plugging step","assignee":null,"inventors":[],"filing_date":"2017-06-16T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A process for fabricating a transistor structure produced sequentially, comprises at least one string of the following steps: producing at least one first transistor from a first semiconductor layer possibly made of silicon; encapsulating at least the first transistor with at least one first dielectric layer defining a first assembly; bonding a second dielectric layer located on the surface of a second semiconductor layer possibly made of silicon, to the first dielectric layer; depositing a planarizing material layer on the surface of the second semiconductor layer; selectively etching the planarizing material layer, to the second semiconductor layer; and producing at least one second transistor from the second semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Process for fabricating a transistor structure including a plugging step","description":"A process for fabricating a transistor structure produced sequentially, comprises at least one string of the following steps: producing at least one first transistor from a first semiconductor layer p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490451","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490451","citation_suggestion":"Patentable. \"Process for fabricating a transistor structure including a plugging step\" (US-10490451). https://patentable.app/patents/US-10490451","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490451","json":"https://patentable.app/api/llm-context/US-10490451","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:18:19.048Z"}