{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490453","patent":{"patent_number":"US-10490453","title":"High threshold voltage FET with the same fin height as regular threshold voltage vertical FET","assignee":null,"inventors":[],"filing_date":"2018-04-12T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":11,"abstract":"A technique relates to a semiconductor device. A first vertical fin is formed with a first gate stack and a second vertical fin with a second gate stack. The second vertical fin has a hardmask on top. The first vertical fin is adjacent to a first bottom source or drain (S/D) region and the second vertical fin is adjacent to a second bottom S/D region. The first gate stack is reduced to a first gate length and the second gate stack to a second gate length, the second gate length being greater than the first gate length because of the hardmask. The hardmask is removed. A first top S/D region is adjacent to the first vertical fin and a second top S/D region is adjacent to the second vertical fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High threshold voltage FET with the same fin height as regular threshold voltage vertical FET","description":"A technique relates to a semiconductor device. A first vertical fin is formed with a first gate stack and a second vertical fin with a second gate stack. The second vertical fin has a hardmask on top.","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490453","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490453","citation_suggestion":"Patentable. \"High threshold voltage FET with the same fin height as regular threshold voltage vertical FET\" (US-10490453). https://patentable.app/patents/US-10490453","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490453","json":"https://patentable.app/api/llm-context/US-10490453","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:26:53.131Z"}