{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490455","patent":{"patent_number":"US-10490455","title":"Gate contact structures and cross-coupled contact structures for transistor devices","assignee":null,"inventors":[],"filing_date":"2019-01-09T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"One integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor and an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure. In one example, the product also includes a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor, wherein an upper surface of the GSD contact structure is positioned at a first level that is at a level above the upper surface of the first conductive source/drain contact structure, and a CB gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of the CB gate contact structure is positioned at a level that is above the first level."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate contact structures and cross-coupled contact structures for transistor devices","description":"One integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor and an insulating source/drain cap positioned above at least a por","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490455","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490455","citation_suggestion":"Patentable. \"Gate contact structures and cross-coupled contact structures for transistor devices\" (US-10490455). https://patentable.app/patents/US-10490455","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490455","json":"https://patentable.app/api/llm-context/US-10490455","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:36:34.296Z"}