{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-10490457","patent":{"patent_number":"US-10490457","title":"Fin field-effect transistor and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2016-08-16T00:00:00.000Z","publication_date":"2019-11-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"The present disclosure provides FinFET structures and fabrication methods thereof. An exemplary fabrication method includes providing a substrate having a first region and a second region; forming a first well region in first region and a second well region in the second region; forming at least one first fin in the first region and at least one second fin in the second region; forming a first doped layer covering the first fin; forming a second doped layer covering the second fin; forming first doped sidewall spacers on side surfaces of the first fin and second doped sidewall spacers on side surfaces of the second fin by a mask-less etching process; and performing a thermal annealing process to the first doped sidewall spacers and the second doped sidewall spacers to form a third well region in the first fin and a fourth well region in the second fin, respectively."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field-effect transistor and fabrication method thereof","description":"The present disclosure provides FinFET structures and fabrication methods thereof. An exemplary fabrication method includes providing a substrate having a first region and a second region; forming a f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-10490457","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-10490457","citation_suggestion":"Patentable. \"Fin field-effect transistor and fabrication method thereof\" (US-10490457). https://patentable.app/patents/US-10490457","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-10490457","json":"https://patentable.app/api/llm-context/US-10490457","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:24:10.235Z"}